!j cx , d na. 20 stern ave, springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 PN4275 to-92 npn switching transistor this device is designed for high speed saturated switching applications at currents to 100 ma. sourced from process 21. see pn2369a for characteristics. absolute maximum ratings* ta = 25c unless otherwise noted symbol vceo vcbo vebo ic tj, tstg parameter collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous operating and storage junction temperature range value 15 40 4.5 200 -55 to +150 units v v v ma c these ratings are limiting values above which the serviceability of any semiconductor device may be impaired notes: 1) these ratings are based on a maximum junction temperature of 15d degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol pd rejc r?ja characteristic total device dissipation derate above 25c thermal resistance, junction to case thermal resistance, junction to ambient max PN4275 350 2.8 125 357 units mw mw7c c/w c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders, quality semi-conductors
npn switching transistor (continued) electrical characteristics ta = 25c unless otherwise noted symbol parameter test conditions min max units off characteristics v(br)ceo v(br)cbo v(br)ebo v(br)ces ib icbo collector-emitter breakdown voltage* collector-base breakdown voltage emitter-base breakdown voltage collector-emitter breakdown voltage base cutoff current collector cutoff current lc= 10ma, ib =0 lc= 10jia, ie = 0 ie= 10 (la, lc = 0 lc=10na,lb = 0 vce = 20 v vcb = 20 v, ie = 0, ta = 65 c 15 40 4.5 40 0.4 10 v v v v ha ^a on characteristics* hfe vce(sat) vse(sat) dc current gain collector-emitter saturation voltage base-emitter saturation voltage lc= 10ma, vce = 1.0v lc = 30 ma, vce = 0.4 v lr.= 100ma, vce = 1.0v lc= 10ma, ib = 1.0ma lc = 30 ma, ib = 3.0 ma lc = 10 ma, ib = 3.3 ma lc= 100ma, ib = 10ma lc= 10 ma, ib = 1.0ma, ta=65c lc= 10 ma, ib= 1.0 ma i0 = 30 ma, ib = 3.0 ma lc= 10 ma, ib = 3.3ma lc= 100ma, ib = 10ma 35 30 18 0.72 0.74 120 0.20 0.25 0.18 0.50 0.30 0.85 1.15 1.0 1.6 v v v v v v v v v small signal characteristics cob hfe output capacitance small-signal current gain vcb = 5.0v, f = 1.0mhz lc = 10 ma, vce = 10 v, f = 100 mhz 4.0 4.0 pf switching characteristics ton td tr wf ts tf ts tum-on time delay time rise time turn-off time storage time fall time storage time vcc = 3.0v, lc = 10ma, ibi = 3.3ma, vbe (off) = -3.0 v vcc=3.0v, lc = 10ma ib1 = ib2 = 3.3ma vbe (off) = -3.0 v lc= lbi = lb2 = 10ma 12 9.0 7.0 12 8.0 8.0 13 ns ns ns ns ns ns ns pulse test: pulse width < 300 (is, duty cycle < 2.0%
to-92 (fs pkg code 92, 94, 96) to-92 (92,94,96) z d_ 1 2 3 92 b e b c f d 2 g 94 b e c b e d g s 96 b b e c e s d g 0.185 r4.70~| i 0.170 4.32 0.185 '~4.7ol 0.170 4.32 j? 0.030 r-75l j 0.014 [0.35 j ?r- 00.060 [01.52] ?/ 0.010 [0.254] deep 0.055 fl-4ol 0.045 i 1.14 j? ? 0.175 f4.45l i 0.150 [_3.8lj? f 1 r ? 1:1 scale 1:1 on letter size pape dimensions shown below are in: inches [millimeters] part weight per unit (gram): 0 inr-. i r \ i t 1 ip ^^ -m ? ttt \ f t \-l-/ r -i 1 t .095 2.41 1 t .084 2.13 ? ' mo oo do 0.615 0.570 0.020 to ^?0.014 i 0 j 5.0'typ. 7 2.0'typ. \ 1aa7 ?36j ? r 1977 0.060 fl.52 -? 0.040 [ 1.02 0.180 '~4.56~| "0.165 4.18 i l "" o o cm 0 d 0.019 ro.48~| -??0.012 [0.30j
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